Performance and a new 2-D analytical modeling of a dual-halo dual-dielectric triple-material surrounding-gate-all-around (DH-DD-TM-SGAA) MOSFET

Abstract

This proposed work covers the effect of dual halo structure with dual dielectric. A 2-D analytical model for potential distribution, threshold voltage, electric field and sub-threshold swing has been described through the Poisson’s equation solution for a novel structure known as dual-halo dual-dielectric triple-material surrounding-gate MOSFET to diminish short channel effects. The new device has been incorporated with Dual halo near the source and drain sides, while the electrode at the gate incorporates three dissimilar work function metals. A relative estimation of short channel effects (SCEs) for DHDD-TM-SG, triple-material surrounding-gate (TM-SG) and single-halo triplematerial surrounding-gate (SH-TM-SG) MOSFETs has also been carried out in terms of threshold-voltage-roll-off, drain induced barrier lowering, hot carrier effects, and also sub-threshold swing. The proposed novel structure significantly reduces the SCEs. Therefore, DH-DD-TM-SG MOSFETs have superior performance than TM-SG and SH-TM-SG MOSFETs. The efficiency of the Dual halo-doped device is investigated. The proposed model demonstrates its validity by a comparing the simulated results from already published devices obtained by using TCAD Silvaco.