MODELING AND ANALYSIS OF THRESHOLD VOLTAGE FOR DUAL-HALO DUAL-DIELECTRIC TRIPLE-MATERIAL SURROUNDING-GATE METAL–OXIDE–SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

Abstract

An analytical model of threshold voltage for a Dual-Halo Dual -Dielectric Triple-Material surrounding-gate (DH-DD-TM-SG) MOSFET is presented. The model described in this paper also incorporates the effect on threshold voltage with variation in silicon film thickness and gate oxide thickness. Moreover the consequence of variations in device parameters like drain bias, gate length ratio, radius of silicon pillar and channel doping concentration are also inspected. A comparison is made between the performance of TM-SG MOSFET and proposed device. A significant improvement has been observed in DH-DD-TM-SG MOSFET structure which can be used to make system-on-chip devices. The effectiveness of the developed model is closely agree with the TCAD results confirms the validity of the proposed model.