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2025 4th International Conference on Distributed Computing and Electrical Circuits and Electronics (ICDCECE)

A Comprehensive Analysis of Low Power VLSI using CNTFET and GDI Technology

Abstract

Low-power Very Large-Scale Integration (VLSI) using Carbon Nanotube Field-Effect Transistor (CNTFET) and Gate Diffusion Input (GDI) technology integrates nanomaterials for power consumption reduction. The CNTFET offers high-speed operation, while GDI minimizes transistor count and power consumption, making the model suitable for low-power applications. However, high power consumption and additional chip area occur due to inefficient circuit design and integration in low-power VLSI circuits using CNTFET and GDI technology. In this analysis, arithmetic and signal processing combinational circuits, are analyzed for low-power VLSI in CNTFET and GDI technology. In the arithmetic circuit, the full adder based on dynamic threshold, 6-transistor full adder, and in the signal processing unit, the 4-bit unary decoder and multiplexer are implemented in the combinational circuit. The power consumption, latency, PDP, and energy consumption are considered as the performance metrics of the methods.

Keywords

arithmetic circuit carbon nanotube field-effect transistor gate diffusion input power consumption very large-scale integration
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