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Yogananthan Sanketh

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S9-042025-2611571

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📚 Publications (1)

Journal: ISCSITR - International Journal of Engineering and Technology • March 2022
As semiconductor devices scale below 10 nm, the need for ultra-thin, high-quality gate dielectrics becomes increasingly critical to ensure performance and reliability. Atomic Layer Deposition (ALD) ha...
Atomic layer deposition Ultra-thin dielectrics Nanoscale devices Semiconductor manufacturing High-k materials
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