Advancements in Atomic Layer Deposition Techniques for Ultra-Thin Gate Dielectrics in Nanoscale Semiconductor Devices
Abstract
As semiconductor devices scale below 10 nm, the need for ultra-thin, high-quality gate dielectrics becomes increasingly critical to ensure performance and reliability. Atomic Layer Deposition (ALD) has emerged as a key enabling technique for fabricating conformal and uniform thin films with precise thickness control. This paper reviews the recent advancements in ALD processes, materials innovation, and integration strategies for gate dielectric applications, with a focus on discuss the current challenges and opportunities for future device scaling.
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