Optimization of the electrical and dielectric properties of Zn-doped ferrites: Insights into the temperature-dependent behavior and applications in advanced electronics

Abstract

Our research explores the temperature-dependent electrical and dielectric behavior of Zn-doped BaNi₁₋ₓZnₓFe₁₆O₂₇ W-type hexaferrites, synthesized via the ceramic route and measured across 1–100 kHz and 25–500 °C. 🔍 Key Insights: • Semiconducting behavior confirmed, with σac rising at higher temperatures due to thermally activated carriers • Transition temperature shift for x = 1.6 and x = 2.0 → indicating a conduction-mechanism change • Broad tan δ peaks → complex dielectric relaxation & frequency-dependent polarization • Optimal performance at x = 0.4 with maximum σac & ε′ and lowest tan δ • Structural tuning via Zn²⁺ replacing Ni²⁺, expanding lattice parameters • Microstructural changes (grain size, porosity) significantly influence polarization & charge transport 📡 These properties make Zn-doped W-type ferrites highly promising for: • RF & microwave electronics • High-temperature devices • Capacitors & advanced dielectrics • Energy-storage and materials-innovation applications