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Abstract
GeTe-based thermoelectric materials have a very high hole carrier concentration (∼1021 cm−3), and thus, improving the figure of merit, ZT, is substantially challenging. In this work, we foremost dope Bi to lower the majority carrier concentration, followed by alloying CuInTe2 to further adjust the hole concentration to an optimal level (0.5–2.0 × 1020 cm−3). This strategy also improves the structural symmetry and leads to hyperconverged valence sub-bands and resonance levels, increasing the effective mass from 1.42 m0 to 1.95 m0. Consequently, a high power factor of ∼23 μW cm−1 K−2 at room temperature and ∼41 μW cm−1 K−2 at 623 K in the (Ge0.93Bi0.05Te0.98)(CuInTe2)0.01 sample is reported. Moreover, the introduced point defects and nano-deposits reduce the lattice thermal conductivity to amorphous levels. As a result, the (Ge0.93Bi0.05Te0.98)(CuInTe2)0.01 sample has a peak ZT value of ∼2.16 at 623 K and an average ZT value of ∼1.42 at 300–773 K. A record high hardness value (∼277 Hv) is achieved. Simultaneous Bi doping and CuInTe2 alloying appear to be an effective strategy for increasing the ZT values of GeTe-based compounds.
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