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Journal Photo for International Journal of Engineering
Peer reviewed only Open Access

International Journal of Engineering (IJE)

Publisher : Materials and Energy Research Center, MERC
Engineering
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e-ISSN 1735-9244
p-ISSN 1025-2495
Issue Frequency Monthly
Est. Year 1988
Mobile 98021887716267
Country Iran
Language English
APC YES
Impact Factor Assignee Google Scholar
Email Najafpour@nit.ac.ir, ije.editor8@gmail.com

Journal Descriptions

International Journal of Engineering (IJE) is published in three quarterly transactions. Transactions A (Basics) deal with the engineering fundamentals. Transactions B (Applications) are concerned with the application of engineering knowledge in the daily life of the human being and Transactions C (Aspects) - starting from January 2012 - emphasize on the main engineering aspects whose elaboration can yield knowledge and expertise that can equally serve all branches of engineering discipline. The objective of the International Journal of Engineering is to provide a forum for communication of information among the world's scientific and technological community and Iranian scientists and engineers. This journal intends to be of interest and utility to researchers and practitioners in the academic, industrial and governmental sectors. All original research contributions of significant value in all areas of engineering discipline are welcome.

International Journal of Engineering (IJE) is :-

  • International, Peer-Reviewed, Open Access, Refereed, Engineering , Online or Print , Monthly Journal

  • UGC Approved, ISSN Approved: P-ISSN P-ISSN: 1025-2495, E-ISSN: 1735-9244, Established: 1988,
  • Does Not Provide Crossref DOI

  • Indexed in: Scopus, WoS

  • Not indexed in DOAJ, PubMed, UGC CARE

Indexing

Publications of IJE

Forging of Sintered Polygon Disc: An Upper Bound Approach
R K Ranjan
An Accurate 2D Analytical Model for Transconductance to Drain Current ratio (gm/Id) for a Dual Halo Dual Dielectric Triple Material Cylindrical Gate A...
Neeraj Gupta July, 2018
A dual-halo dual-dielectric triple-material cylindrical-gate-all-around/surrounding gate (DH-DD-TM-CGAA/SG) MOSFET has been proposed and an analytical model for the transconductance-to-drain...